PART |
Description |
Maker |
A42L0616S-45L A42L0616S-50L A42L0616S-60 A42L0616S |
45ns 1M x 16bit CMOS dynamic ram with EDO page mode 50ns 1M x 16bit CMOS dynamic ram with EDO page mode 60ns 1M x 16bit CMOS dynamic ram with EDO page mode
|
AMIC Technology
|
K4E641612C-TL45 K4E661612C-TL45 K4E641612C-60 K4E6 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4E641612B-TC K4E661612B-TC K4E641612B-L K4E661612 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM416C4100B |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4F641612D-TI K4F661612D-TI K4F661612D-TP K4F64161 |
4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
2SD1119 |
Satisfactory operation performances at high efficiency with the lowvoltage power supply.
|
TY Semiconductor Co., Ltd
|
K4F171612D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 100万16的CMOS动态随机存储器的快速页面模
|
Samsung Semiconductor Co., Ltd.
|
N08L63W2A |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
|
ON Semiconductor
|
2SD1280 |
Low collector-emitter saturation voltage VCE(sat). lowvoltage power supply.
|
TY Semiconductor Co., Ltd
|
KM416V1204BJ KM416V1004BT-L7 KM416V1204BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns 1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
|
Samsung Electronic Samsung semiconductor
|
NL17SZ126 NL17SZ126-D NL17SZ126DF |
LOGIC GATE|BUFFER|CMOS|TSSOP|6PIN|PLASTIC 逻辑门|缓冲区|的CMOS | TSSOP封装| 6针|塑料 Non-inverting 3-State Buffer
|
Micron Technology, Inc. ON Semiconductor
|
MC74LCX125 MC74LCX125D MC74LCX125DT MC74LCX125SD M |
LOW-VOLTAGE CMOS QUAD BUFFER LVC/LCX/Z SERIES, QUAD 1-BIT DRIVER, TRUE OUTPUT, PDSO14 LOW-VOLTAGE CMOS QUAD BUFFER 低电压CMOS四路缓冲
|
Motorola Mobility Holdings, Inc. ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc] http://
|